MIC2133 datasheet(7/50 Pages) MICROCHIP

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DS20006653B-page 7

MIC2133

Adaptive Voltage Positioning (AVP), i.e., DROOP

VDROOP at No Load

VDRP_NLOAD

—

Measure DROOP voltage ~ 0V

when VCSP1 – VCSN1 = 0V,

VCSP2 – VCSN2 = 0V

VDROOP at Maximum Positive

Range

VDRP(PMAX)

—

0.96

—

Measure DROOP voltage ~1.2V

when

VCSP1 – VCSN1 = –120 mV,

VCSP2 – VCSN2 = –120 mV

Ripple Injection

Ripple Injection Pulse Width

tPW(RI)

—

100

120

—

Ripple Injection Prepositioning

Current

IBIAS

—

4.8

µA

Force VRIPINJ = 0V,

VSS = 0V,

measure current

Injection Driver ON Resistance

RDSON(INJ)

—50

—

Ω

—

Internal MOSFET Drivers

DHx On-Resistance, High State

RON_DHH

—2.5

4.5

Ω

ISOURCE = 0.1A

DHx On-Resistance, Low State

RON_DHL

—1.6

3.2

Ω

ISINK = 0.1A

DLx On-Resistance, High State

RON_DLH

—2.5

4.5

Ω

ISOURCE = 0.1A

DLx On-Resistance, Low State

RON_DLL

—0.8

1.5

Ω

ISINK = 0.1A

SW, VIN and BST Leakage

BST Leakage

ILEAK(BST)

——

µA

VBST = 75V

VIN Leakage

ILEAK(VIN)

——

µA

VIN = 70V

SW Leakage

ILEAK(SW)

——

µA

VSW = 70V

Power Good (PG)

PG Threshold from Low to High

VPG_TH

%VOUT VFBS rising

PG Threshold Hysteresis

VPG_HYS

—7

—

%VOUT VFBS falling

PG Delay

tD_PG

—

100

—

µs

VFBS rising

PG Low State Voltage

VPG_L

—70

200

VFBS < 90% x VNOM,

IPG = 1 mA

PG Leakage Current

ILEAK(PG)

——

500

VPG = 5.5V

ELECTRICAL CHARACTERISTICS(1) (CONTINUED)

Electrical Characteristics: VIN =12V; VOUT =5V; fSW = 500 kHz/phase; VBST – VSW =5V; TA = +25°C; unless noted.

Boldface values indicate -40°C ≤ TJ ≤ +125°C.

Parameters

Symbol

Min.

Typ.

Max.

Units

Conditions

Note 1: Specification for packaged product only.

2: Ensured by design and characterization. Not production tested.

3: Measured in Test mode.

4: The maximum duty cycle is limited by the fixed mandatory off-time of typically 360 ns.

5: Limited by maximum junction temperature TJ = +125°C.

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