NPN/PNP SILICON POWER DARLINGTON TRANSISTORS

TIP122F NPN

TIP127F PNP

TO-220FP

Designed for General-Purpose Amplifier and Low-Speed Switching Applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

100

V

Collector -Emitter Voltage

VCEO

100

V

Emitter Base Voltage

VEBO

5.0

V

Collector Current -Continuous

IC

5.0

A

Collector Current (Peak)

ICM

8.0

A

Base Current

IB

120

mA

Total Power Dissipation @ Tc=25 deg C

PD

65

W

Derate Above 25 deg C

0.52

W/deg C

Total Power Dissipation @ Ta=25 deg C

PD

2.0

W

Derate Above 25 deg C

0.016

W/deg C

Unclamped Inductive Load Energy (1)

E50

mj

Junction Temperature

Tj

150

deg C

Storage Temperature Range

Tstg

-65 to +150

deg C

THERMAL RESISTANCE

From Junction to Ambient

Rth(j-a)

62.5

deg C/W

From Junction to Case

Rth(j-c)

1.92

deg C/W

(1) IC=1A, L=100mH,P.R.F.=10Hz, VCC=20V, RBE=100 ohms

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector Emitter (sus) Voltage

VCEO (sus) * IC=100mA, IB=0

100

-

V

Collector Cut off Current

ICBO

VCB=100V, IE=0

-

0.2

mA

ICEO

IB=O, VCE=50V

-

0.5

mA

Emitter Cut off Current

IEBO

VEB=5V,IC=0

-

2.0

mA

Collector Emitter Saturation Voltage

VCE(Sat)*

IC=3A, IB=12mA

-

2.0

V

IC=5A, IB=20mA

-

4.0

V

Base Emitter on Voltage

VBE(on) *

IC=3A, VCE=3V

-

2.5

V

DC Current Gain

hFE*

IC=0.5A, VCE=3V

1.0

-

K

IC=3A, VCE=3V

1.0

-

K

Continental Device India Limited

Data Sheet

Page 1 of 3

E

C

B

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company