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IRFZ44VPBF 数据表(PDF) 2 Page - International Rectifier |
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IRFZ44VPBF 数据表(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFZ44VPbF 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 2.5 V TJ = 25°C, IS = 51A, VGS = 0V trr Reverse Recovery Time ––– 70 105 ns TJ = 25°C, IF = 51A Qrr Reverse Recovery Charge ––– 146 219 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 55 220 A Starting TJ = 25°C, L = 89µH RG = 25Ω, IAS = 51A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: ISD ≤ 51A, di/dt ≤ 227A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.062 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 16.5 m Ω VGS = 10V, ID = 31A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 24 ––– ––– S VDS = 25V, ID = 31A ––– ––– 25 µA VDS = 60V, VGS = 0V ––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 67 ID = 51A Qgs Gate-to-Source Charge ––– ––– 18 nC VDS = 48V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 25 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 13 ––– VDD = 30V tr Rise Time ––– 97 ––– ID = 51A td(off) Turn-Off Delay Time ––– 40 ––– RG = 9.1Ω tf Fall Time ––– 57 ––– RD = 0.6Ω, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1812 ––– VGS = 0V Coss Output Capacitance ––– 393 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 103 ––– pF ƒ = 1.0MHz, See Fig. 5 nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current |
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