IRFZ44VPbF

11/10/03

Parameter

Max.

Units

55

39

A

Pulsed Drain Current

220

Power Dissipation

115

W

Linear Derating Factor

0.77

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

115

mJ

Avalanche Current

55

A

Repetitive Avalanche Energy

11

mJ

dv/dt

Peak Diode Recovery dv/dt

4.5

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

1.3

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

Junction-to-Ambient

–––

62

Thermal Resistance

www.irf.com

1

S

D

G

TO-220AB

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Optimized for SMPS Applications

Description

PD - 94826

Lead-Free