VS-MB Series

www.vishay.com

Vishay Semiconductors

Revision: 15-Jan-2019

2

Document Number: 93563

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Forward Voltage Drop Characteristics

Maximum Allowable Ambient Temperature

FORWARD CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

26MB..A

VALUES

36MB..A

UNITS

Maximum DC output current



at case temperature

IO

Resistive or inductive load

25

35

A

Capacitive load

20

28

65

60

°C

Maximum peak, one-cycle



non-repetitive forward current

IFSM

t = 10 ms

No voltage



reapplied

Initial



TJ = TJ maximum

400

475

A

t = 8.3 ms

420

500

t = 10 ms

100 % VRRM

reapplied

335

400

t = 8.3 ms

350

420

Maximum I2t for fusing

I2t

t = 10 ms

No voltage



reapplied

790

1130

A2s

t = 8.3 ms

725

1030

t = 10 ms

100 % VRRM

reapplied

560

800

t = 8.3 ms

512

730

Maximum I2

t for fusing

I2

tI2t for time t

x = I2xx0.1  tx  10 ms, VRRM = 0 V

5.6

11.3

kA2

s

Low level value of threshold voltage

VF(TO)1

(16.7 % x

 x I

F(AV) < I <  x IF(AV)), TJ maximum

0.76

0.79

V

High level value of threshold voltage

VF(TO)2

(I >

 x I

F(AV)), TJ maximum

0.92

0.96

Low level forward slope resistance

rt1

(16.7 % x

 x I

F(AV) < I <  x IF(AV)), TJ maximum

6.8

5.8

m



High level forward slope resistance

rt2

(I >

 x I

F(AV)), TJ maximum

5.0

4.5

Maximum forward voltage drop

VFM

TJ = 25 °C, tp = 400 μs, IFM = 40 Apk (26MB), 

IFM = 55 Apk (36MB)

1.11

1.14

V

Maximum DC reverse current

IRRM

TJ = 25 °C, per diode at VRRM

10

μA

RMS isolation voltage base plate

VINS

f = 50 Hz, t = 1 s

2700

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

26MB-A

VALUES

36MB-A

UNITS

Junction and storage temperature

range

TJ, TStg

-55 to 150

°C

Maximum thermal resistance

junction to case per bridge

RthJC

1.7

1.2

K/W

Maximum thermal resistance,



case to heatsink

RthCS

Mounting surface, smooth, flat, and greased

0.2

Approximate weight

20

g

Mounting torque ± 10 %

Bridge to heatsink

2.0

Nm

Average Forward Current (A)

50

70

90

110

130

150

0

5

10

15

20

25

30

180°

(Rect)

180°

(Sine)

26MB..A Series

Instantaneous Forward Voltage (V)

1

10

100

1000

0.5

1

1.5

2

2.5

3

3.5

26MB..A Series

Tj = 25 °C

Tj = 150 °C