BSC072N025S datasheet(3/10 Pages) INFINEON

3 / 10 page

BSC072N025S G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

1680

2230

Output capacitance

C oss

643

855

Reverse transfer capacitance

Crss

120

Turn-on delay time

t d(on)

5.3

7.9

Rise time

t r

4.8

7.2

Turn-off delay time

t d(off)

-21

Fall time

t f

3.8

5.7

Gate Charge Characteristics

Gate to source charge

Q gs

5.6

7.4

Gate charge at threshold

Q g(th)

2.7

3.6

Gate to drain charge

Q gd

3.8

5.8

Switching charge

Q sw

6.7

9.6

Gate charge total

Q g

-13

Gate plateau voltage

V plateau

3.3

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 5 V

-12

Output charge

Q oss

V DD=15 V, V GS=0 V

-14

Reverse Diode

Diode continous forward current

I S

Diode pulse current

I S,pulse

160

Diode forward voltage

V SD

V GS=0 V, I F=40 A,

T j=25 °C

0.93

1.1

Reverse recovery charge

Q rr

V R=15 V, I F=I S,

di F/dt =400 A/µs

4) See figure 16 for gate charge parameter definition

T C=25 °C

Values

V GS=0 V, V DS=15 V,

f =1 MHz

V DD=15 V, V GS=10 V,

I D=25 A, R G=2.7 Ω

V DD=15 V, I D=25 A,

V GS=0 to 5 V

Rev. 0.94

page 3

2006-05-10

BSC072N025S 数据表(PDF) 3 Page - Infineon Technologies AG

BSC072N025S 数据表(HTML) 3 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7 8 9 10

数据表下载