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BSC072N025S 数据表(PDF) 1 Page - Infineon Technologies AG |
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BSC072N025S 数据表(HTML) 1 Page - Infineon Technologies AG |
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1 / 10 page ![]() BSC072N025S G OptiMOS®2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC 1 for target applications • Logic level / N-channel • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 40 A T C=100 °C 40 T A=25 °C, R thJA=45 K/W 2) 15 Pulsed drain current I D,pulse T C=25 °C 3) 160 Avalanche energy, single pulse E AS I D=40 A, R GS=25 Ω 160 mJ Reverse diode dv /dt dv /dt I D=40 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 60 W T A=25 °C, R thJA=45 K/W 2) 2.8 Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Value V DS 25 V R DS(on),max 7.2 m Ω I D 40 A Product Summary PG-TDSON-8 Type Package Marking BSC072N025S G PG-TDSON-8 72N025S Rev. 0.94 page 1 2006-05-10 |
类似零件编号 - BSC072N025S |
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类似说明 - BSC072N025S |
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