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74ALVT16245DL 数据表(PDF) 3 Page - NXP Semiconductors

部件名 74ALVT16245DL
功能描述  2.5V/3.3V ALVT 16-bit transceiver 3-State
PDF  12 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

74ALVT16245DL 数据表(HTML) 3 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
74ALVT16245
2.5V/3.3V 16-bit transceiver (3-State)
1998 Feb 13
3
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1DIR
1B0
1B1
GND
1B2
1B3
1B4
1B5
GND
1B6
1B7
2B0
2B1
GND
2B3
VCC
2B4
VCC
2B2
2B5
GND
2B7
2DIR
2B6
1OE
1A0
1A1
GND
1A2
1A3
1A4
1A5
GND
1A6
1A7
2A0
2A1
GND
2A3
VCC
2A4
VCC
2A2
2A5
GND
2A7
2OE
2A6
SA00020
PIN DESCRIPTION
PIN NUMBER
SYMBOL
NAME AND FUNCTION
1, 24
nDIR
Direction control input
47, 46, 44, 43,
41, 40, 38, 37,
36, 35, 33, 32,
30, 29, 27, 26
nA0 – nA7
Data inputs/outputs (A side)
2, 3, 5, 6, 8, 9,
11, 12, 13, 14,
16, 17, 19, 20,
22, 23
nB0 – nB7
Data inputs/outputs (B side)
25, 48
nOE
Output enable input (active-Low)
4, 10, 15, 21,
28, 34, 39, 45
GND
Ground (0V)
7, 18, 31, 42
VCC
Positive supply voltage
FUNCTION TABLE
INPUTS
INPUTS/OUTPUTS
nOE
nDIR
nAx
nBx
L
L
nAx = nBx
Inputs
L
H
Inputs
nBx = nAx
H
X
Z
Z
H = High voltage level
L
= Low voltage level
X = Don’t care
Z = High Impedance “off ” state
ABSOLUTE MAXIMUM RATINGS1, 2
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VCC
DC supply voltage
–0.5 to +4.6
V
IIK
DC input diode current
VI < 0
–50
mA
VI
DC input voltage3
–0.5 to +7.0
V
IOK
DC output diode current
VO < 0
–50
mA
VOUT
DC output voltage3
Output in Off or High state
–0.5 to +7.0
V
IO
DC output current
Output in Low state
128
mA
IOUT
DC output current
Output in High state
–64
mA
Tstg
Storage temperature range
–65 to +150
°C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
°C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.



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