IXFN44N80P datasheet(2/4 Pages) IXYS

2 / 4 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN 44N80P

Symbol

Test Conditions

Characteristic Values

J = 25°C unless otherwise specified)

Min.

Typ.

Max.

DS= 20 V; ID = 0.5 ID25, Note 1

iss

oss

GS = 0 V, VDS = 25 V, f = 1 MHz

910

rss

d(on)

GS = 10 V, VDS = 0.5 VDSS, ID = ID25

d(off)

G = 1 Ω (External)

g(on)

200

GS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

thJC

0.18

°C/W

thCS

0.05

°C/W

Source-Drain Diode

Characteristic Values

J = 25°C unless otherwise specified)

Symbol

Test Conditions

Min.

Typ.

Max.

GS = 0 V

Repetitive

100

F = IS, VGS = 0 V, Note 1

1.5

F = 22 A, -di/dt = 100 A/μs

250

R = 100 V, VGS = 0 V

0.8

μC

8.0

Notes: 1. Pulse test, t

≤ 300 μs, duty cycle d ≤ 2%

(M4 screws (4x) supplied)

SOT-227B (IXFN) Outline

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2

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