IXFN44N80P datasheet(1/4 Pages) IXYS

部件名	IXFN44N80P

功能描述	PolarHV HiPerFET Power MOSFET

PDF	4 Pages

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制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

标志

1 / 4 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

800

V

GS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C

= 25

°C39

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

100

A

I

AR

T

C

= 25

°C22

A

E

AR

T

C

= 25

°C80

mJ

E

AS

T

C

= 25

°C

3.4

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,

10

V/ns

T

J

≤ 150°C, R

G = 10 Ω

P

D

T

C

= 25

°C

694

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS, 1 minute

2500

V~

I

ISOL < 1 mA, 10 seconds

3000

V~

M

d

Mounting torque

1.13/10 Nm/lb.in.

Terminal torque

1.13/10 Nm/lb.in.

Weight

30

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS

= 0 V, I

D = 800 μA

800

V

GS(th)

V

DS

= V

GS, ID = 8 mA

3.0

5.0

V

I

GSS

V

GS

=

± 30 V, V

DS = 0 V

± 200

nA

I

DSS

V

DS

= V

DSS

50

μA

V

GS = 0 V

T

J = 125°C

1.5

mA

R

DS(on)

V

GS

= 10 V, I

D = 0.5 ITD25, Note 1

190

m

Ω

PolarHVTM HiPerFET

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFN 44N80P

V

DSS

= 800

V

I

D25

=39

A

R

DS(on)

≤≤≤≤≤ 190 m

Ω

t

rr

≤≤≤≤≤ 250

ns

DS99503E(06/06)

G

D

S

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate

D = Drain

S = Source

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

Features

• International standard package

• Encapsulating epoxy meets

UL 94 V-0, flammability classification

• miniBLOC with Aluminium nitride

isolation

• Low R

DS (on) HDMOS

TM process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

• Low voltage relays

Advantages

• Easy to mount

• Space savings

• High power density

类似零件编号 - IXFN44N80P

制造商	部件名	数据表	功能描述
IXYS Corporation	IXFN44N80P	138Kb / 5P	Power MOSFET
IXYS Corporation	IXFN44N80P	138Kb / 5P	Power MOSFET

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类似说明 - IXFN44N80P

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IXFN44N80P 数据表(PDF) 1 Page - IXYS Corporation

IXFN44N80P 数据表(HTML) 1 Page - IXYS Corporation

类似零件编号 - IXFN44N80P

类似说明 - IXFN44N80P

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链接网址

IXFN44N80P 数据表(PDF) 1 Page - IXYS Corporation

IXFN44N80P 数据表(HTML) 1 Page - IXYS Corporation

类似零件编号 - IXFN44N80P

类似说明 - IXFN44N80P

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数据表 下载

链接网址

数据表下载