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STN5PF02V 数据表(PDF) 3 Page - STMicroelectronics |
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STN5PF02V 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STN5PF02V Electrical ratings 3/12 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 20 V VGS Gate- source voltage ± 8 V ID Drain current (continuous) at TC = 25°C 4.2 A ID Drain current (continuous) at TC = 100°C 2.6 A IDM (1) 1. Pulse width limited by safe operating area Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed Drain current (pulsed) 17 A PTOT Total dissipation at TC = 25°C 2.5 W Tj Tstg Max. operating junction temperature Storage temperature –55 to 150 °C Table 2. Thermal resistance Symbol Parameter Max value Unit Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch² pad, 2oz Cu and tc< 10sec Thermal resistance junction-pc board 50 °C/W Rthj-amb Thermal resistance junction-ambient 90 °C/W |
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