STN5PF02V datasheet(4/12 Pages) STMICROELECTRONICS

部件名	STN5PF02V

功能描述	P-channel 20V - 0.065??- 4.2A - SOT-223 2.5V - Drive STripFET??II Power MOSFET

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

4 / 12 page

Electrical characteristics

STN5PF02V

4/12

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250µA, VGS = 0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating,@125°C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 8V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

0.45

RDS(on)

Static drain-source on

resistance

VGS = 4.5V, ID = 2.1A

VGS = 2.5V, ID = 2.1A

0.065

0.085

0.080

0.10

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Forward transconductance VDS = 15V , ID = 2.5A

6.6

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 15V, f = 1 MHz,

VGS = 0

412

179

42.5

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 10V, ID = 4.2A,

VGS = 2.5V

(see Figure 13)

4.5

0.73

1.75

6nC

STN5PF02V 数据表(PDF) 4 Page - STMicroelectronics

STN5PF02V 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表下载