3

OptiMOSTMPowerTransistor,-60V

ISC800P06LM

Rev.2.0,2022-10-13

Final Data Sheet

1Maximumratings

atTA=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

1)

ID

-

-

-

-

-

-

-

-

-19.6

-15.2

-19.3

-13.6

A

VGS=-10V,TC=25°C

VGS=-10V,TC=100°C

VGS=-4.5V,TC=25°C

VGS=-4.5V,TC=100°C

Pulsed drain current

2)

ID,pulse

-

-

-78.4

A

TA=25°C

Avalanche energy, single pulse

3)

EAS

-

-

221

mJ

ID=-16A,RGS=25

Ω

Gate source voltage

VGS

-20

-

20

V

-

Power dissipation

Ptot

-

-

83

W

TC=25°C

Operating and storage temperature

Tj,Tstg

-55

-

175

°C

IEC climatic category; DIN IEC 68-1:

55/175/56

2Thermalcharacteristics

Table3Thermalcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Thermal resistance, junction - case,

bottom

RthJC

-

-

2.4

°C/W -

Device on PCB,

6 cm² cooling area

4)

RthJA

-

-

50

°C/W -

1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature

as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual

environmental conditions.

2) See Diagram 3 for more detailed information

3) See Diagram 13 for more detailed information

4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.

PCB is vertical in still air.