4

OptiMOSTMPowerTransistor,-60V

ISC800P06LM

Rev.2.0,2022-10-13

Final Data Sheet

3Electricalcharacteristics

atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Drain-source breakdown voltage

V(BR)DSS

-60

-

-

V

VGS=0V,ID=-250µA

Gate threshold voltage

VGS(th)

-1

-1.5

-2

V

VDS=VGS,ID=-724µA

Zero gate voltage drain current

IDSS

-

-

-0.1

-10

-1

-100

µA

VDS=-60V,VGS=0V,Tj=25°C

VDS=-60V,VGS=0V,Tj=125°C

Gate-source leakage current

IGSS

-

-10

-100

nA

VGS=-20V,VDS=0V

Drain-source on-state resistance

RDS(on)

-

-

67

79

80

100

m

Ω

VGS=-10V,ID=-16A

VGS=-4.5V,ID=-12.8A

Gate resistance

RG

-

5

-

Ω

-

Transconductance

gfs

-

22

-

S

|VDS|

≥2|ID|RDS(on)max,ID=-16A

Table5Dynamiccharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Input capacitance

1)

Ciss

-

1086

1400

pF

VGS=0V,VDS=-30V,f=1MHz

Output capacitance

1)

Coss

-

154

210

pF

VGS=0V,VDS=-30V,f=1MHz

Reverse transfer capacitance

1)

Crss

-

36

65

pF

VGS=0V,VDS=-30V,f=1MHz

Turn-on delay time

td(on)

-

3.9

-

ns

VDD=-30V,VGS=-10V,ID=-16A,

RG,ext=1.6

Ω

Rise time

tr

-

1.8

-

ns

VDD=-30V,VGS=-10V,ID=-16A,

RG,ext=1.6

Ω

Turn-off delay time

td(off)

-

35.8

-

ns

VDD=-30V,VGS=-10V,ID=-16A,

RG,ext=1.6

Ω

Fall time

tf

-

13.5

-

ns

VDD=-30V,VGS=-10V,ID=-16A,

RG,ext=1.6

Ω

Table6Gatechargecharacteristics2)

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Gate to source charge

Qgs

-

-3.8

-

nC

VDD=-30V,ID=-16A,VGS=0to-4.5V

Gate charge at threshold

Qg(th)

-

-1.6

-

nC

VDD=-30V,ID=-16A,VGS=0to-4.5V

Gate to drain charge

1)

Qgd

-

-9.5

-14.3

nC

VDD=-30V,ID=-16A,VGS=0to-4.5V

Switching charge

Qsw

-

-11.7

-

nC

VDD=-30V,ID=-16A,VGS=0to-4.5V

Gate charge total

1)

Qg

-

-16.0

-20.0

nC

VDD=-30V,ID=-16A,VGS=0to-4.5V

Gate plateau voltage

Vplateau

-

-3.6

-

V

VDD=-30V,ID=-16A,VGS=0to-4.5V

Gate charge total

1)

Qg

-

-11.2

-14.8

nC

VDD=-30V,ID=-16A,VGS=0to-10V

Output charge

1)

Qoss

-

-11.4

-15.2

nC

VDD=-30V,VGS=0V

1) Defined by design. Not subject to production test

2) See diagram ,Gate charge waverforms, for gate charge parameter definition