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STP3NK80Z 数据表(PDF) 1 Page - STMicroelectronics |
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STP3NK80Z 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 29 page ![]() April 2017 DocID9565 Rev 7 1/29 This is information on a product in full production. www.st.com STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z N- channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STD3NK80Z-1 800 V 4.5 Ω 2.5 A STD3NK80ZT4 800 V 4.5 Ω 2.5 A STF3NK80Z 800 V 4.5 Ω 2.5 A STP3NK80Z 800 V 4.5 Ω 2.5 A Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Zener-protected Applications Switching applications Description These high voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-e stablished PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs including the revolutionary MDmesh™ products. Table 1: Device summary Order code Marking Package Packaging STD3NK80Z-1 D3NK80Z IPAK Tube STD3NK80ZT4 D3NK80Z DPAK Tape and reel STF3NK80Z F3NK80Z TO-220FP Tube STP3NK80Z P3NK80Z TO-220 Tube |
类似零件编号 - STP3NK80Z |
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类似说明 - STP3NK80Z |
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