STP3NK80Z datasheet(3/29 Pages) STMICROELECTRONICS

3 / 29 page

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,

STP3NK80Z

Electrical ratings

DocID9565 Rev 7

3/29

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220,

DPAK,

IPAK

TO-220FP

VDS

Drain-source voltage

800

VGS

Gate-source voltage

±30

Drain current (continuous) at TC = 25 °C

2.5

2.5(1)

Drain current (continuous) at TC = 100 °C

1.57

1.57(1)

IDM(2)

Drain current (pulsed)

10(1)

PTOT

Total dissipation at TC = 25 °C

ESD

Gate-source, human body model,

R = 1.5 kΩ, C = 100 pF

dv/dt(3)

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t = 1 s, TC = 25 °C)

2.5

Tstg

Storage temperature range

-55 to 150

°C

Operation junction temperature range

Notes:

(1)This value is limited by package.

(2)Pulse width is limited by safe operating area.

(3)ISD ≤ 2.5 A, di/dt ≤ 200 A/μs, VDS(peak) < V(BR)DSS, VDD = 640 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

TO-220

TO-220FP

DPAK

IPAK

Rthj-case

Thermal resistance junction-case

1.78

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

100

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

°C/W

Notes:

(1)When mounted on FR-4 board of 1 inch², 2 oz Cu.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or non-repetitive

(pulse width limited by TJ max)

2.5

EAS

Single pulse avalanche energy (starting TJ =25 °C, ID = IAR, VDD= 50 V)

170

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