1

3

TAB

2

DPAK

Features

•

6 µs of short-circuit withstand time

•

VCE(sat) = 1.6 V (typ.) @ IC = 4 A

•

Tight parameter distribution

•

Safer paralleling

•

Low thermal resistance

•

Soft and very fast recovery antiparallel diode

Applications

•

Motor control

•

UPS

•

PFC

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss and

the short-circuit functionality is essential. Furthermore, the positive VCE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.

Product status

STGD4M65DF2

Product summary

Order code

STGD4M65DF2

Marking

G4M65DF2

Package

DPAK

Packing

Tape and reel

Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

STGD4M65DF2

Datasheet

DS11397 - Rev 5 - December 2018

For further information contact your local STMicroelectronics sales office.

www.st.com