Table 5. IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

td(on)

Turn-on delay time

VCE = 400 V, IC = 4 A, VGE = 15 V, RG = 47 Ω

(see Figure 28. Test circuit for inductive load switching )

12

-

ns

tr

Current rise time

6.9

-

ns

(di/dt)on Turn-on current slope

480

-

A/µs

td(off)

Turn-off delay time

86

-

ns

tf

Current fall time

120

-

ns

Eon (1)

Turn-on switching

energy

0.040

-

mJ

Eoff (2)

Turn-off switching

energy

0.136

-

mJ

Ets

Total switching energy

0.176

-

mJ

td(on)

Turn-on delay time

VCE = 400 V, IC = 4 A, VGE = 15 V, RG = 47 Ω, TJ = 175 °C

(see Figure 28. Test circuit for inductive load switching)

11.6

-

ns

tr

Current rise time

8

-

ns

(di/dt)on Turn-on current slope

410

-

A/µs

td(off)

Turn-off delay time

85

-

ns

tf

Current fall time

211

-

ns

Eon (1)

Turn-on switching

energy

0.067

-

mJ

Eoff (2)

Turn-off switching

energy

0.210

-

mJ

Ets

Total switching energy

0.277

-

mJ

tsc

Short-circuit withstand

time

VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C

6

-

µs

VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C

10

-

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

trr

Reverse recovery time

IF = 4 A, VR = 400 V, VGE = 15 V, di/dt = 800 A/µs (see

Figure 28. Test circuit for inductive load switching)

-

133

-

ns

Qrr

Reverse recovery charge

-

140

-

nC

Irrm

Reverse recovery current

-

5

-

A

dIrr/dt

Peak rate of fall of

reverse recovery current

during tb

-

520

-

A/µs

Err

Reverse recovery energy

-

15

-

µJ

trr

Reverse recovery time

IF = 4 A, VR = 400 V, VGE = 15 V, TJ = 175 °C, di/dt = 800 A/µs

(see Figure 28. Test circuit for inductive load switching)

-

236

-

ns

Qrr

Reverse recovery charge

-

370

-

nC

Irrm

Reverse recovery current

-

6.6

-

A

dIrr/dt

Peak rate of fall of

reverse recovery current

during tb

-

378

-

A/µs

Err

Reverse recovery energy

-

32

-

µJ

STGD4M65DF2

Electrical characteristics

DS11397 - Rev 5

page 4/20