2

Electrical ratings

2.1

Absolute maximum ratings

Table 2. Inverter part

Symbol

Parameter

Value

Unit

VDSS

MOSFET blocking voltage (or drain-source voltage) for each MOSFET (VIN(1) = 0 V)

500

V

±ID

Continuous drain current each MOSFET (TC = 25 °C)

2

A

±IDP(2)

Peak drain current each MOSFET (less than 1 ms)

4

A

PTOT

Total power dissipation for each MOSFET (TC = 25 °C)

11.8

W

1. Applied between HINi, LINi and GND for i = U, V, W.

2. Pulse width limited by max. junction temperature.

Table 3. Control part

Symbol

Parameter

Min.

Max.

Unit

VOUT

Output voltage applied between OUTU, OUTV, OUTW - GND

Vboot - 21

Vboot + 0.3

V

VCC

Low voltage power supply

- 0.3

21

V

VCIN

Comparator input voltage

- 0.3

VCC + 0.3

V

Vop+

Op-amp non-inverting input

- 0.3

VCC + 0.3

V

Vop-

Op-amp inverting input

- 0.3

VCC + 0.3

V

Vboot

Bootstrap voltage

- 0.3

620

V

VIN

Logic input voltage applied between HIN, LIN and GND

- 0.3

15

V

VSD/OD

Open-drain voltage

- 0.3

15

V

dVOUT/dt

Allowed output slew rate

50

V/ns

Table 4. Total system

Symbol

Parameter

Value

Unit

VISO

Isolation withstand voltage applied on each pin and heatsink plate (AC voltage, t = 60 s)

1000

Vrms

TJ

Power chip operating junction temperature

-40 to 150

°C

TC

Module case operation temperature

-40 to 125

°C

2.2

Thermal data

Table 5. Thermal data

Symbol

Parameter

Value

Unit

Rth(j-c)

Thermal resistance junction-case single MOSFET

10.6

°C/W

Rth(j-a)

Thermal resistance junction-ambient (per module)

22

°C/W

STIPN2M50-H

Electrical ratings

DS11935 - Rev 6

page 5/19