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TPCF8303 数据表(PDF) 2 Page - Toshiba Semiconductor |
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TPCF8303 数据表(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() TPCF8303 2003-07-16 2 Thermal Characteristics Characteristics Symbol Max Unit Single-device operation (Note 3a) Rth (ch-a) (1) 92.6 Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Rth (ch-a) (2) 111.6 °C/W Single-device operation (Note 3a) Rth (ch-a) (1) 235.8 Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Rth (ch-a) (2) 378.8 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD = -16 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = -1.5 A Note 5: Repetitive rating; Pulse width limited by Max. Channel temperature. Note 6: Black round marking “●” locates on the left lower side of parts number marking “F5C” indicates terminal No. 1. FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) |
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