TPCF8303 datasheet(3/4 Pages) TOSHIBA

3 / 4 page

TPCF8303

2003-07-16

Electrical Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±8V, VDS = 0 V

―

±10

µA

Drain cut-off current

IDSS

VDS = -20 V, VGS = 0 V

―

-10

µA

V (BR) DSS

ID = -10 mA, VGS = 0 V

-20

―

Drain-source breakdown voltage

V (BR) DSX

ID = -10 mA, VGS = 8 V

-10

―

Gate threshold voltage

Vth

VDS = -10 V, ID = -200 µA

-0.45

―

-1.2

RDS (ON)

VGS = -1.8 V, ID = -1.5 A

―

120

250

RDS (ON)

VGS = -2.5 V, ID = -1.5 A

―

Drain-source ON resistance

RDS (ON)

VGS = -4.5 V, ID = -1.5 A

―

Ω

Forward transfer admittance

|Yfs|

VDS = -10 V, ID = -1.5 A

3.0

6.0

―

Input capacitance

Ciss

―

860

―

Reverse transfer capacitance

Crss

―

110

―

Output capacitance

Coss

VDS = -10 V, VGS = 0 V, f = 1 MHz

―

140

―

Rise time

―

5.6

―

Turn-on time

ton

―

Fall time

―

Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 µs

―

Total gate charge

(gate-source plus gate-drain)

―

Gate-source charge1

Qgs1

―

0.9

―

Gate-drain (“miller”) charge

Qgd

VDD ∼− -16 V, VGS = -5 V,

ID = -3 A

―

2.7

―

Source-Drain Ratings and Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP

―

-12

Forward voltage (diode)

VDSF

IDR = -3.0 A, VGS = 0 V

―

1.2

VDD ∼− -10 V

-5 V

VGS

0 V

ID = -1.5 A

VOUT

TPCF8303 数据表(PDF) 3 Page - Toshiba Semiconductor

TPCF8303 数据表(HTML) 3 Page - Toshiba Semiconductor

Html Pages

1 2 3 4

数据表下载

链接网址

TPCF8303 数据表(PDF) 3 Page - Toshiba Semiconductor

TPCF8303 数据表(HTML) 3 Page - Toshiba Semiconductor

Html Pages

1 2 3 4

数据表 下载

链接网址

数据表下载