Characteristics

P0109AL

2/8

DocID030704 Rev 2

1

Characteristics

Table 2: Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current

(180 ° conduction angle)

Tamb = 36 °C

0.25

A

IT(AV)

Average on-state current

(180 ° conduction angle)

0.16

ITSM

Non repetitive surge peak on-state current

(Tj initial = 25 °C

tp = 8.3 ms

7

A

tp = 10 ms

6

I2t

I2t value for fusing

tp = 10 ms

0.18

A2s

dl/dt

Critical rate of rise of on-state current

IG = 2 x IGT, tr

≤ 100 ns

f = 60 Hz

Tj = 125 °C

50

A/µs

VDRM/VRRM

Repetitive peak off-state voltage

Tj = 125 °C

100

V

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

0.5

A

PG(AV)

Average gate power dissipation

Tj = 125 °C

0.02

W

Tstg

Storage junction temperature range

-40 to +150

°C

Tj

Operating junction temperature

-40 to +125

°C

Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified)

Symbol

Test conditions

Value

Unit

IGT

VD = 12 V, RL

= 140 Ω

Max.

1

µA

VGT

Max.

0.8

V

VGD

VD = VDRM, RL

= 3.3 kΩ, RGK = 1000 Ω

Tj = 125 °C

Min.

0.1

V

VRG

IRG = 10 µA

Min.

8

V

IH

IT = 50 mA, RGK

= 1000 Ω

Max.

6

mA

IL

IG = 1.2 x IGT, RGK

= 1000 Ω

Max.

7

mA

dV/dt

VD = 67 % VDRM, RGK

= 1000 Ω

Tj = 125 °C

Min.

100

V/µs

Table 4: Static characteristics

Symbol

Test conditions

Value

Unit

VTM

ITM = 0.4 A, tp = 380 µs

Tj = 25 °C

Max.

1.7

V

VTO

Threshold voltage

Tj = 125 °C

Max.

1

RD

Dynamic resistance

Tj = 125 °C

Max.

1000

mΩ

IDRM/IRRM

VD = VDRM; VR = VRRM, RGK

= 1000 Ω

Tj = 25 °C

Max.

1

µA

Tj = 125 °C

100

Table 5: Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-a)

Junction to ambient (Mounted on FR4 with recommended pad layout)

400

°C/W