P0109AL

Characteristics

DocID030704 Rev 2

3/8

1.1

Characteristics (curves)

Figure 1: Maximum average power dissipation

versus average on-state current

Figure 2: Average and DC on-state current versus

ambient temperature

Figure 3: Relative variation of thermal impedance

junction to ambient versus pulse duration

Figure 4: Gate trigger, holding, and latching

currents with gate trigger voltage versus junction

temperature

Figure 5: Relative variation of holding current

versus gate-cathode resistance

Figure 6: Relative variation of dV/dt immunity

versus gate-cathode resistance

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0.22

0.24

0.26

0.28

0.30

P(W)

I

(A)

T(AV)

α = 180°

360°

α

0

2 5

50

75

100

125

0.00

0.05

0.10

0.15

0.20

0.25

0.30

I

(A)

T(AV)

T

(°C)

amb

α = 180°

D.C.

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

0.01

0.10

1.00

K=[Z

/R

th(j-a)

th(j-a) ]

t (s)

p

SOT23-3L

0.0

1.0

2.0

3.0

4.0

5.0

6.0

-40

-20

0

20

40

60

80

100

120

140

IH and IL

(RGK =1 KΩ)

VGT

IGT

T (°C)

j

Relative variations

Typical values

IGT, VGT, IH, IL[Tj]/IGT, VGT, IH, IL[Tj = 25 °C]

1E-2

1E-1

1E+0

1E+1

0

2

4

6

8

10

12

14

16

18

20

R

(k )

GK

Ω

I [R

] / I [

H

GK

H RGK = 1 kΩ]

Tj = 25°C

Typical values

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

1.0

10.0

R

(k )

GK

Ω

dV/dt[R

] / dV/dt[

= 1k ]

GK

Ω

RGK

Tj = 125°C

V

= 0.67 x V

D

DRM

Typical values