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STPS20M100ST 数据表(PDF) 2 Page - STMicroelectronics

部件名 STPS20M100ST
功能描述  100 V, 20 A power Schottky rectifier
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS20M100ST 数据表(HTML) 2 Page - STMicroelectronics

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1
Characteristics
Table 1. Absolute ratings (limiting values with anode terminals short circuited, at 25 °C unless otherwise
specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS)
Forward rms current
30
A
IF(AV)
Average forward current δ = 0.5, square wave
TO-220AB
D²PAK
I²PAK
TC = 130 °C
20
A
TO-220FPAB
TC = 85 °C
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
350
A
PARM
Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
1150
W
Tstg
Storage temperature range
-65 to +175
°C
Tj
Maximum operating junction temperature (1)
+150
°C
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameter
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
TO-220AB, D²PAK, I²PAK
1.2
°C/W
TO-220FPAB
4
For more information, please refer to the following application note :
AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics (anode terminals short circuited)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR (1)
Reverse leakage current
Tj = 25 °C
VR = 70 V
-
5
µA
Tj = 125 °C
-
5
mA
Tj = 25 °C
VR = 100 V
-
10
40
µA
Tj = 125 °C
-
10
40
mA
VF (2)
Forward voltage drop
Tj = 25 °C
IF = 5 A
-
550
mV
Tj = 125 °C
-
455
Tj = 25 °C
IF = 10 A
-
660
730
Tj = 125 °C
-
530
600
Tj = 25 °C
IF = 20 A
-
775
850
Tj = 125 °C
-
610
690
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
STPS20M100S
Characteristics
DS6169 - Rev 5
page 2/15



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