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STPS20M100ST 数据表(PDF) 3 Page - STMicroelectronics

部件名 STPS20M100ST
功能描述  100 V, 20 A power Schottky rectifier
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS20M100ST 数据表(HTML) 3 Page - STMicroelectronics

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To evaluate the conduction losses, use the following equation:
P = 0.425 x IF(AV) + 0.0088 x IF 2 (RMS)
For more information, please refer to the following application notes related to the power losses :
AN604: Calculation of conduction losses in a power rectifier
AN4021: Calculation of reverse losses on a power diode
1.1
Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current (anode terminals short circuited)
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
IF(AV)(A)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
T
δ= tp/T
tp
PF(AV)(W)
Figure 2. Average forward current versus ambient
temperature (δ = 0.5, anode terminals short circuited)
0
2
4
6
8
10
12
14
16
18
20
22
0
25
50
75
100
125
150
Tamb(°C)
Rth(j-a) = Rth(j-c)
Rth(j-a) = 15 °C/W
T
δ= tp/T
tp
TO-220AB/I²PAK/D²PAK
TO-220FPAB
IF(AV)(A)
Figure 3. Normalized avalanche power derating versus
pulse duration (Tj = 125 °C)
P
(tp)
P
(10 µs)
ARM
ARM
0.001
0.01
0.1
1
1
10
100
1000
t (µs)
p
Figure 4. Reverse leakage current versus reverse voltage
applied (typical values)
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0
10
20
30
40
50
60
70
80
90
100
VR(V)
Tj = 150 °C
Tj = 125 °C
Tj = 25 °C
Tj = 100 °C
Tj = 75 °C
Tj = 50 °C
IR(mA)
STPS20M100S
Characteristics (curves)
DS6169 - Rev 5
page 3/15



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