2SC5369 datasheet(3/14 Pages) RENESAS

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2SC5369

SILICON TRANSISTOR

Document No. P11644EJ1V0DS00 (1st edition)

Date Published September 1996 P

Printed in Japan

FEATURES

• High fT

14 GHz TYP.

• High gain

| S21e | 2 = 14 dB TYP.

@f = 2 GHz, VCE = 3 V, IC = 10 mA

• NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA

• 6-pin small mini mold package

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

VCBO

Collector to Emitter Voltage

VCEO

Emitter to Base Voltage

VEBO

Collector Current

Total Power Dissipation

150

Junction Temperature

150

°C

Storage Temperature

Tstg

–65 to +150

°C

PACKAGE DIMENSION (in mm)

PIN CONNECTIONS

1. Emitter

4. Emitter

2. Emitter

5. Emitter

3. Base

6. Collector

NPN EPITAXIAL SILICON TRANSISTOR FOR

MICROWAVE AMPLIFICATION

1996

PRELIMINARY DATA SHEET

2.1±0.1

1.25±0.1

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