2SC5369

2

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0

0.1

µA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0

0.1

µA

DC Current Gain

hFE

VCE = 3 V, IC = 10 mANote 1

80

160

Gain Bandwidth Product

fT

VCE = 3 V, IC = 10 mA, f = 2.0 GHz

14

GHz

Feed-back Capacitance

Cre

VCB = 3 V, IE = 0, f = 1 MHzNote 2

0.15

0.25

pF

Insertion Gain

| S21e | 2

VCE = 3 V, IC = 10 mA, f = 2.0 GHz

12

14

dB

Noise Figure

NF

VCE = 3 V, IC = 3 mA, f = 2.0 GHz

1.3

2.3

dB

STANDARD SPECIFICATION

FB

Marking

T95

hFE

80 to 160

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty cycle ≤ 2 %, Pulsed

2. Measure by using 3-terminal bridge with emitter pin connected to guard terminal of bridge.

TYPICAL CHARACTERISTICS (TA = 25

°C)

0

50

100

150

100

200

PT - TA CHARACTERISTICS

Ambient Temperature TA (

°C)

0

0.5

1.0

20

40

IC - VBE CHARACTERISTICS

DC Base Voltage VBE (V)

VCE = 3 V

10

30

50

02

6

8

10

30

IC - VCE CHARACTERISTICS

Collector to Emitter Voltage VCE (V)

10

10

50

50

200

hFE - IC CHARACTERISTICS

Collector Current IC (mA)

VCE = 3 V

20

500

20

4

Ie = 200 A

180 A

160 A

140 A

120 A

100 A

80 A

60 A

40 A

20 A

µ

µ

µ

µ

µ

µ

µ

µ

µ

µ

100

12

5

20