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CS1301 数据表(PDF) 14 Page - National Semiconductor (TI) |
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CS1301 数据表(HTML) 14 Page - National Semiconductor (TI) |
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14 / 25 page ![]() www.national.com 14 Revision 2.2 Signal Definitions (Continued) 2.2.2 Memory Interface Signals Signal Name Ball No. Type Description MM_CLK0 Y10 O SDRAM Output Clock (at 2x or 3x TRI_CLKIN frequency). Two identi- cal outputs are provided to reliably drive several small memory configu- rations without external glue. A series terminating resistor close to CS1301/CS1311 is required to reduce ringing. For driving a 50 Ω trace, a resistor of 27 to 33Ω is recommended. The use of higher impedance traces in the SDRAM signals is not recom- mended. MM_CLK1 W10 MM_A[13:00] See Table 2-3 on page 12 O Address Bus. Used for row and column addresses. WARNING: Do not connect MM_A[13:11] directly to SDRAM A[13:11] pins. Refer to Chapter 12 SDRAM Memory System of the Philips Semi- conductor PNX1300 Series Media Processors Data Book for accurate connection diagrams. MM_DQ[31:00] See Table 2-3 on page 12 I/O 32-Bit Data I/O Bus. The Main Memory Interface module also supports a 16-bit I/O interface. MM_CKE0 Y19 O Clock Enable Output to SDRAMs. Two identical outputs are provided in order to reliably drive several small memory configurations without external glue. MM_CKE1 U1 MM_CS0# U2 O Chip Select for DRAM rank n; active low. The chip select pins may be used as address pins to support the 256-Mbit SDRAM device organized in x16. MM_CS1# U20 MM_CS2# U3 MM_CS3# U19 MM_RAS# W14 O Row Address Strobe; active low. MM_CAS# Y15 O Column Address Strobe; active low. MM_WE# W15 O Write Enable; active low. MM_DQM0 T19 O Data Mask Enable. These are byte-enable signals for the 32-bit MM_DQ bus. MM_DQM1 R18 MM_DQM2 V1 MM_DQM3 V4 |
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