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BCP52_BCX52_BC52PA

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Product data sheet

Rev. 9 — 18 October 2011

12 of 22

Nexperia

BCP52; BCX52; BC52PA

60 V, 1 A PNP medium power transistors

7.

Characteristics

[1]

Pulse test: tp  300 s;  = 0.02.

FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2

Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;

typical values

006aac687

10

1

102

103

Zth(j-a)

(K/W)

10–1

10–5

10

10–2

10–4

102

10–1

tp (s)

10–3

103

1

0

duty cycle = 1

0.01

0.05

0.1

0.2

0.33

0.5

0.75

0.02

0.25

Table 8.

Characteristics

Tamb =25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = 30 V; IE =0A

-

-

100

nA

VCB = 30 V; IE =0A;

Tj = 150 C

--

10

A

IEBO

emitter-base cut-off

current

VEB = 5V; IC =0A

-

-

100

nA

hFE

DC current gain

VCE = 2V

IC = 5mA

63

-

-

IC = 150 mA

63

-

250

IC = 500 mA

[1] 40

-

-

DC current gain

VCE = 2V

hFE selection -10

IC = 150 mA

63

-

160

hFE selection -16

IC = 150 mA

100

-

250

VCEsat

collector-emitter

saturation voltage

IC = 500 mA;

IB = 50 mA

[1] --

0.5

V

VBE

base-emitter voltage

VCE = 2V; IC = 500 mA [1] --

1V

Cc

collector capacitance

VCB = 10 V; IE =ie =0A;

f=1MHz

-15

-

pF

fT

transition frequency

VCE = 5V; IC = 50 mA;

f=100MHz

-

145

-

MHz