© Nexperia B.V. 2017. All rights reserved

BCP52_BCX52_BC52PA

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 9 — 18 October 2011

13 of 22

Nexperia

BCP52; BCX52; BC52PA

60 V, 1 A PNP medium power transistors

VCE = 2V

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 55 C

Tamb =25 C

Fig 15. DC current gain as a function of collector

current; typical values

Fig 16. Collector current as a function of

collector-emitter voltage; typical values

VCE = 2V

(1) Tamb = 55 C

(2) Tamb =25 C

(3) Tamb = 100 C

IC/IB =10

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 55 C

Fig 17. Base-emitter voltage as a function of collector

current; typical values

Fig 18. Collector-emitter saturation voltage as a

function of collector current; typical values

006aac688

100

200

300

hFE

0

IC (A)

–10–4

–10

–1

–10–3

–10–1

–10–2

(1)

(2)

(3)

VCE (V)

0

−2.0

−1.6

−0.8

−1.2

−0.4

006aaa230

−0.8

−0.4

−1.2

−1.6

IC

(A)

0

−4.5

−9

−13.5

−18

−22.5

−27

−31.5

IB (mA) = −45 −40.5 −36

006aac689

–0.4

–0.8

–1.2

VBE

(V)

0.0

IC (mA)

–10–1

–104

–103

–1

–102

–10

(1)

(2)

(3)

006aac690

–1

–10–1

–10

VCEsat

(V)

–10–2

IC (mA)

–10–1

–104

–103

–1

–102

–10

(1)

(2)

(3)