DC–28 GHz GaAs MMIC Distributed Amplifier

7

2 Product Overview

MMA040AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC)

pseudomorphic high-electron mobility transistor (pHEMT) low-noise distributed amplifier die that

operates between DC and 28 GHz. The amplifier provides flat gain of 16.5 dB, 2.5 dB noise figure,

and 27 dBm OIP3, while requiring only 60 mA from a 8 V supply. The MMA040AA amplifier features

compact die size and I/Os that are internally matched to 50 Ω, facilitating easy integration into

multi-chip modules (MCMs).

2.1 Functional Block Diagram

The following illustration shows the primary functional blocks of the MMA040AA device.

Figure 1 Functional Block Diagram

2.2 Applications

The MMA040AA device is designed for the following applications:

• Test instrumentation

• Telecom infrastructure

• Microwave radio and VSAT

• Microwave communications

2.3 Key Features

The following are key features of the MMA040AA device:

• Frequency range: DC to 28 GHz

• Flat gain: 16.5 dB

• High IP3: 27 dBm

• Low noise: 2.5 dB at 10 GHz

• Supply voltage: 7 V at 60 mA

• 50 Ω matched I/O

• Compact die size: 3 mm × 1.32 mm × 0.1 mm