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STM8AF6366 数据表(PDF) 60 Page - STMicroelectronics |
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STM8AF6366 数据表(HTML) 60 Page - STMicroelectronics |
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60 / 95 page ![]() Electrical characteristics STM8AF6366 60/95 DS12343 Rev 2 10.3.4 Internal clock sources and timing characteristics Subject to general operating conditions for VDD and TA. High speed internal RC oscillator (HSI) Figure 18. Typical HSI frequency vs VDD Low speed internal RC oscillator (LSI) Subject to general operating conditions for VDD and TA. Table 30. HSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHS HSI oscillator user trimming accuracy Trimmed by the application for any VDD and TA conditions 3-bit calibration -1(1) -1(1) % 4-bit calibration -0.5(1) -0.5(1) HSI oscillator accuracy (factory calibrated) 3.0 V ≤ VDD ≤ 5.5 V, -40 °C ≤ TA ≤ 150 °C -5 - 5 3.0V ≤ VDD ≤ 5.5V, -40°C ≤ TA ≤ 125 °C -2.5(2) -2.5(2) tsu(HSI) HSI oscillator wakeup time -- - 2(3) µs 1. Selection between legacy 3-bit calibration and 4-bit extended calibration is done using the HSITRIM bit in OPT3 and NOPT3.To achieve a higher accuracy, 4-bit calibration must be enabled. 2. These values are guaranteed for STM8AF63x6ITx order codes only. 3. Guaranteed by characterization. -3% -2% -1% 0% 1% 2% 3% 2.5 3 3.5 4 4.5 5 5.5 6 VDD [V] -40°C 25°C 85°C 125°C |
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