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STM32G0C1NET7X 数据表(PDF) 97 Page - STMicroelectronics |
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STM32G0C1NET7X 数据表(HTML) 97 Page - STMicroelectronics |
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97 / 159 page ![]() DS13564 Rev 4 97/159 STM32G0C1xC/xE Electrical characteristics 124 Figure 25. Current injection into FT_e input with diode active Output driving current The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and up to ±15 mA with relaxed VOL/VOH. In the user application, the number of I/O pins which can drive current must be limited to respect the absolute maximum rating specified in Section 5.2: • The sum of the currents sourced by all the I/Os on VDDIO1, plus the maximum consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating IVDD (see Table 21: Voltage characteristics). • The sum of the currents sunk by all the I/Os on VSS, plus the maximum consumption of the MCU sunk on VSS, cannot exceed the absolute maximum rating IVSS (see Table 21: Voltage characteristics). Output voltage levels Unless otherwise specified, the parameters given in the table below are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 24: General operating conditions. All I/Os are CMOS- and TTL-compliant (FT OR TT unless otherwise specified). MSv63112V1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 0 1 2 3 4 5 IINJ (mA) VIN – VDDIO1 (V) -40°C 25°C 125°C |
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