数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

STGAP2GSN 数据表(PDF) 10 Page - STMicroelectronics

部件名 STGAP2GSN
功能描述  Isolated 3 A single gate driver for Enhancement mode GaN FETs
PDF  20 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGAP2GSN 数据表(HTML) 10 Page - STMicroelectronics

Back Button STGAP2GSN Datasheet HTML 6Page - STMicroelectronics STGAP2GSN Datasheet HTML 7Page - STMicroelectronics STGAP2GSN Datasheet HTML 8Page - STMicroelectronics STGAP2GSN Datasheet HTML 9Page - STMicroelectronics STGAP2GSN Datasheet HTML 10Page - STMicroelectronics STGAP2GSN Datasheet HTML 11Page - STMicroelectronics STGAP2GSN Datasheet HTML 12Page - STMicroelectronics STGAP2GSN Datasheet HTML 13Page - STMicroelectronics STGAP2GSN Datasheet HTML 14Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 10 / 20 page
background image
7
Typical application
The STGAP2GSN is design to drive Enhancement-mode GaN FETs, thanks to the separated turn-on and turn-
offoutput pins and to the optimized UVLO protection. Since the threshold voltage of GaN HEMTs is typically lower
than 2 V, attention must be paid to avoid induced turn on phenomena during high dV/dt transients. The most
common solution is to differentiate the values of turn-on and turn-off gate resistors, making the turn-off resistor
smaller than the turn-on one. In some cases, the use of negative driving might be needed (see Figure 6. Typical
application diagram - Negative gate driving, depending on the GaN characteristic and working conditions. In all
cases the use of a 10 kΩ pull-down resistorbetween the gate and Kelvin-Source pins is recommended, in order to
avoid gate spikes while the driver is not yet powered on.
Optimal driving of GaN switches requires an optimized routing of gate loop with minimized parasitic inductance;in
order to ease this task many GaN swithes comes with a dedicated Kelvin-Source pin dedicated for the
gatedriving. Also the current loop of the and power stage and the connection to the power bulk capacitor should
bedesign with minimum loop inductance; some recommendations are provided in Section 8 .
Figure 5. Typical application diagram - Positive gate driving
GND_HS
VH_HS
VDD
MCU
HIN
LIN
VDD
VDD
C
R
C
R
C
R
C
R
GND_PWR
Load_ Phase
HV_BUS
VDD
GND
IN+
IN-
VH
GNDISO
VDD
GND
IN+
IN-
VH
GNDISO
I
S
O
L
A
T
I
O
N
Level
Shifter
Floating
Section
Control
Logic
Floating ground
UVLO
VH
GOFF
Control
Logic
UVLO
VDD
GON
I
S
O
L
A
T
I
O
N
Level
Shifter
Floating
Section
Control
Logic
Floating ground
UVLO
VH
GOFF
Control
Logic
UVLO
VDD
GON
GND_LS
VH_LS
Figure 6. Typical application diagram - Negative gate driving
VDD
MCU
HIN
LIN
VDD
VDD
C
R
C
R
C
R
C
R
VDD
GND
IN+
IN-
VH
VDD
GND
IN+
IN-
VH
GNDISO
I
S
O
L
A
T
I
O
N
Level
Shifter
Floating
Section
Control
Logic
Floating ground
UVLO
VH
GOFF
Control
Logic
UVLO
VDD
GON
I
S
O
L
A
T
I
O
N
Level
Shifter
Floating
Section
Control
Logic
Floating ground
UVLO
VH
GOFF
Control
Logic
UVLO
VDD
GON
GND_HS
VH_HS
VL_HS
+
VL
VH
+
GNDISO
GND_LS
VH_LS
VL_LS
+
VL
VH
+
GND_PWR
Load_ Phase
HV_BUS
STGAP2GSN
Typical application
DS14151 - Rev 1
page 10/20



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com