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STGAP2GSN 数据表(PDF) 11 Page - STMicroelectronics

部件名 STGAP2GSN
功能描述  Isolated 3 A single gate driver for Enhancement mode GaN FETs
PDF  20 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGAP2GSN 数据表(HTML) 11 Page - STMicroelectronics

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8
Layout
8.1
Layout guidelines and considerations
In order to optimize the PCB layout, the following considerations should be taken into account:
The power transistors must be placed as close as possible to the gate driver, so to minimize the gate
loop area and inductance that might cause noise, ringing and, in the worst cases, induced turn-on. Gate
loop inductance is crucial especially in GaN applications, where the VGSth is typically lower than other
technologies. To further minimize gate loop inductance, it is recommended to use an inner plane layer
to route the gate current return path (Kelvin-Source to GNDISO) flowing just underneath gate resistors.
Adequate vias to connect to the plane shall be placed near driver and power switch source pins.
When driving GaN switches the use of a 10 kΩ pull-down resistor between Gate and Kelvin-Source is also
recommended. Such resistor should be placed close to the GaN pins.
If the power transistor provides Kelvin-Source pin, it shall be used for gate driving while using the standard
source pin(s) only for load current. The standard source pin(s) and the Kelvin-Source pin shall not be
shorted together on PCB.
If the power transistor does not provide Kelvin-Source pin, the net connecting the driver (GNDISO pin) to
the power switch source pin shall use a dedicated trace/plane. The trace/plane shall start just on power
switch source pin to minimize path sharing between gate current and load current.
SMT ceramic capacitors (or different types of low-ESR and low-ESL capacitors) must be placed close to
each supply rail pins. A 100 nF capacitor must be placed between VDD and GND and between VH and
GNDISO, as close as possible to device pins, in order to filter high-frequency noise and spikes. In order to
provide local storage for pulsed current, a second capacitor with a value between 1 µF and 10 µF should
also be placed close to the supply pins.
It is good practice to add filtering capacitors close to logic inputs of the device (IN+, IN-), particularly for fast
switching or noisy applications.
To avoid degradation of the isolation between the primary and secondary side of the driver, there should
not be any trace or conductive area below the driver.
If the system has multiple layers, it is recommended to connect the VH and GNDISO pins to internal
ground or power planes through multiple vias of adequate size. These vias should be located close to
theIC pins to maximize thermal conductivity.
8.2
Layout example
An example of STGAP2GSN half-bridge suggested PCB layout with main signals highlighted by different colors
is shown in Figure 7. It is recommended to follow this example for correct positioning and connection of filtering
capacitors.
Figure 7. Half-bridge suggested PCB layout
Q1
Q2
U1
U2
CVH1
CVH2
CVDD1
ROFF
RON
G1
D1
S1
CIN
RIN
CVH1
CVH2
CVDD1
ROFF
RON
G2
D2
S2
CIN
RIN
TOP
BOTTOM
STGAP2GSN
Layout
DS14151 - Rev 1
page 11/20



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