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LIS2L01

ELECTRICAL CHARACTERISTCS (Temperature range 0°C to 80°C, supply voltage Vdd = 5V ±5%.)

1

FUNCTIONALITY

1.1 Sensor element

The ThELMA process is utilized to create a surface micro-machined accelerometer. The technology allows car-

ry out silicon structure on suspension, the structure are attached to the substrate in few points called anchor

and free to move on a plane parallel to the substrate itself. To be compatible with the traditional packaging tech-

niques a cap is placed on top the sensor element to avoid the molding goes between the elements making the

sensor useless.

The equivalent circuit for the sensor is shown in the below figure; when a linear acceleration is applied, the proof

mass displaces from its nominal position, causing an imbalance in the capacitive half-bridge. This imbalance is

measured using charge integration in response to a voltage pulse applied to the sense capacitor.

The nominal value of the capacitors, at steady state, is few pF and when an acceleration is applied the maximum

variation of the capacitive load is few tenth of pF.

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Vdd

Supply voltage

4.75

5

5.25

V

Idd

Supply current

10

mA

Voff

Zero-g level

T = 25°C

ratiometric to Vdd

Vdd/2

– 0.1

Vdd/2

Vdd/2

+ 0.1

V

Ar

Acceleration range

TBD

±1TBD

g

So

Sensitivity ratiometric to Vdd

Vdd = 5V

T = 25°C

1.8

2

2.2

V/g

fuc

Upper cutoff frequency low pass

filter

27

30

33

Hz

an

Equivalent noise acceleration

Bandwidth = 0.1…30Hz

1

mg

Vt

Self test output voltage

Ratiometric to Vdd

T = 25°C

@ 5V

TBD

V

Vst

Self test input

Logic 1 voltage

Logic 0 voltage

3.75

Vss

Vdd

1.25

V

V

Cload

Capacitive load drive

100

pF

Rload

Resistive load output

50

k

Ω