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LT4322 数据表(PDF) 16 Page - Analog Devices

部件名 LT4322
功能描述  Floating, High-Voltage Active Rectifier Controller
PDF  29 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

LT4322 数据表(HTML) 16 Page - Analog Devices

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Data Sheet
LT4322
analog.com
Rev. 0
16 of 29
Figure 24. LT4322 Active Rectifier Diode Building Block
Design Example
Figure 24 shows an LT4322 building block circuit that replaces a Schottky or rectifier diode in AC rectification
applications. This building block can be used to construct half-wave rectifiers, full-wave rectifiers, and full bridge
rectifiers. The following example shows how to choose components for a 60Hz, 24VRMS full-bridge application circuit
with a 2A average output load current. The AC input is applied to the ANODE.
A 24VRMS input waveform is typically 34V peak and 68V peak-to-peak. In a full-bridge application, each power MOSFET
has a maximum drain-to-source voltage that is half of the peak-to-peak voltage, or 34V in this case. Choose a power
MOSFET using equation (3).
RDS(ON)< 10 mV/(3 × 2A) = 16.7mΩ
(9)
The BUK7M15-60E is a good choice for this application, with its 60V drain-to-source voltage rating and 13mΩ typical
RDS(ON)at VGS = 10V. Additionally, its minimum threshold voltage VGS(TH) of 2.4V ensures that the LT4322 will be able to
turn it off quickly to prevent reverse conduction when the ANODE voltage falls below the CATHODE voltage.
Because the BUK7M15-60E’s CISS is much lower than 10nF, a 10nF capacitor CG is connected between the gate and
source of the power MOSFET for optimal compensation of the LT4322’s transconductance amplifier.
Choose a hold-up cap for a 60Hz input waveform:
CVDDA(µF)= 1,500× (1/60Hz) = 25µF
(10)
Rounding to the nearest standard value capacitor, a 22µF, 25V electrolytic capacitor is chosen.
PCB Layout Considerations
Special attention should be given to the PC board layout to ensure a stable and efficient application circuit. Figure
25 shows a representative 2-layer PCB to outline some of the primary considerations. U1 is the LT4322, M1 is the
power MOSFET, and M2 is the depletion MOSFET.
Connect the ANODE, VSSA, and CATHODE as close as possible to the MOSFET source and drain pins. Use a Kelvin
connection from the ANODE pin to the source of the external MOSFET. Lay out the ANODE and VSSA connections so
that the VSSA currents are minimized in the ANODE connection. Keep the drain and source traces to the MOSFET wide
and short to minimize parasitic resistance. Keep the trace from the LT4322 GATE pin to the MOSFET gate short and
wide. This practice will reduce the chance of MOSFET parasitic oscillations. Locate the GATE trace near the ANODE
side of the circuit, not the CATHODE side, in order to minimize coupling from the CATHODE connection to the GATE.
Place the CVDDA as close as possible to the VDDA and VSSA pins. Use short, wide traces to connect CVDDAto VDDA and VSSA.
M1
CVDDA
22µF
CG
10nF
GATE CATHODE
VSSA
VDDA
VDDC
ANODE
LT4322
BUK7M15-60EX
ACTIVE RECTIFIER DIODE BUILDING BLOCK
CATHODE
ANODE
(AC < 60V p-p)



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