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LT4322 数据表(PDF) 16 Page - Analog Devices |
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LT4322 数据表(HTML) 16 Page - Analog Devices |
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16 / 29 page ![]() Data Sheet LT4322 analog.com Rev. 0 16 of 29 Figure 24. LT4322 Active Rectifier Diode Building Block Design Example Figure 24 shows an LT4322 building block circuit that replaces a Schottky or rectifier diode in AC rectification applications. This building block can be used to construct half-wave rectifiers, full-wave rectifiers, and full bridge rectifiers. The following example shows how to choose components for a 60Hz, 24VRMS full-bridge application circuit with a 2A average output load current. The AC input is applied to the ANODE. A 24VRMS input waveform is typically 34V peak and 68V peak-to-peak. In a full-bridge application, each power MOSFET has a maximum drain-to-source voltage that is half of the peak-to-peak voltage, or 34V in this case. Choose a power MOSFET using equation (3). RDS(ON)< 10 mV/(3 × 2A) = 16.7mΩ (9) The BUK7M15-60E is a good choice for this application, with its 60V drain-to-source voltage rating and 13mΩ typical RDS(ON)at VGS = 10V. Additionally, its minimum threshold voltage VGS(TH) of 2.4V ensures that the LT4322 will be able to turn it off quickly to prevent reverse conduction when the ANODE voltage falls below the CATHODE voltage. Because the BUK7M15-60E’s CISS is much lower than 10nF, a 10nF capacitor CG is connected between the gate and source of the power MOSFET for optimal compensation of the LT4322’s transconductance amplifier. Choose a hold-up cap for a 60Hz input waveform: CVDDA(µF)= 1,500× (1/60Hz) = 25µF (10) Rounding to the nearest standard value capacitor, a 22µF, 25V electrolytic capacitor is chosen. PCB Layout Considerations Special attention should be given to the PC board layout to ensure a stable and efficient application circuit. Figure 25 shows a representative 2-layer PCB to outline some of the primary considerations. U1 is the LT4322, M1 is the power MOSFET, and M2 is the depletion MOSFET. Connect the ANODE, VSSA, and CATHODE as close as possible to the MOSFET source and drain pins. Use a Kelvin connection from the ANODE pin to the source of the external MOSFET. Lay out the ANODE and VSSA connections so that the VSSA currents are minimized in the ANODE connection. Keep the drain and source traces to the MOSFET wide and short to minimize parasitic resistance. Keep the trace from the LT4322 GATE pin to the MOSFET gate short and wide. This practice will reduce the chance of MOSFET parasitic oscillations. Locate the GATE trace near the ANODE side of the circuit, not the CATHODE side, in order to minimize coupling from the CATHODE connection to the GATE. Place the CVDDA as close as possible to the VDDA and VSSA pins. Use short, wide traces to connect CVDDAto VDDA and VSSA. M1 CVDDA 22µF CG 10nF GATE CATHODE VSSA VDDA VDDC ANODE LT4322 BUK7M15-60EX ACTIVE RECTIFIER DIODE BUILDING BLOCK CATHODE ANODE (AC < 60V p-p) |
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