5

Electrical characteristics

VCC = 12 V, VEn/Fault = 5 V, CI = 10 µF, CO = 10 µF, TJ = 25 °C (unless otherwise specified).

Table 5. Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Under/Overvoltage protection

VClamp

Average output clamping voltage

VCC = 17 V

13.8

15

16.2

V

VUVLO

Undervoltage lockout

Turn-on, voltage rising

7.7

8.5

9.3

V

VHyst

UVLO hysteresis

0.8

V

Power MOSFET

tdly

Delay time

Enabling of chip to soft start beginning

(10 % of VOUT), No Cdv/dt

250

µs

RDSon

On-resistance (1)

TJ = 25 °C

40

50

mΩ

TJ = 85 °C (2)

48

VOFF

Off-state output voltage

VCC = 18 V, VGS = 0, RL = infinite

1

10

mV

Current Limit

IShort

Short-circuit current limit

RLim = 22 Ω, STEF12SGR

2.8

A

ILim

Overload current limit

RLim = 22 Ω, STEF12SGR

5.5

A

IShort

Short-circuit current limit

RLim = 22 Ω, STEF12SPUR

2.4

A

ILim

Overload current limit

RLim = 22 Ω, STEF12SPUR

4.6

A

IShort

Short-circuit current limit

RLim = 39 Ω, STEF12SGR

1.9

A

ILim

Overload current limit

RLim = 39 Ω, STEF12SGR

3.8

A

dv/dt circuit

dv/dt

Output voltage ramp time

From 10% to 90% of VOUT, no Cdv/dt

0.85

ms

En/Fault

VIL

Low level input voltage

Output disabled

1.8

V

VI(INT)

Intermediate level input voltage

Thermal fault, output disabled

1.2

1.3

1.45

V

VIH

High level input voltage

Output enabled

2.5

V

VI(MAX)

High state maximum voltage

4.9

V

IIL

Low level input current (sink)

VEn/Fault = 0 V

-20

-50

µA

II

High level leakage current for

external switch

VEn/Fault = 5 V

1

µA

Maximum fan-out for fault signal

Total numbers of chips that can be connected to

this pin for simultaneous shutdown

3

Units

Current consumption

IBias

Bias current

Device operational

0.37

mA

Thermal shutdown (2)

0.16

Off mode, VEn/Fault = 0 V

0.12

External MOSFET gate driver (DFN10 package only)

IG

Sourcing current

Device On

30

µA

STEF12S

Electrical characteristics

DS13002 - Rev 5

page 6/31