PDTC124X_SER_7

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 07 — 16 November 2009

5 of 12

NXP Semiconductors

PDTC124X series

NPN resistor-equipped transistors; R1 = 22 k

Ω, R2 = 47 kΩ

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

[3]

Device mounted on an FR4 PCB with 60

μm copper strip line, standard footprint.

7.

Characteristics

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

SOT416

[1] --

833

K/W

SOT490

[1][2] --

500

K/W

SOT346

[1] --

500

K/W

SOT883

[2][3] --

500

K/W

SOT54

[1] --

250

K/W

SOT23

[1] --

500

K/W

SOT323

[1] --

625

K/W

Table 8.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =50V; IE = 0 A

-

-

100

nA

ICEO

collector-emitter

cut-off current

VCE =30V; IB =0A

-

-

1

μA

VCE =30V; IB =0A;

Tj =150 °C

--

50

μA

IEBO

emitter-base cut-off

current

VEB =5 V; IC = 0 A

-

-

120

μA

hFE

DC current gain

VCE =5V; IC =5mA

80

-

-

VCEsat

collector-emitter

saturation voltage

IC =10 mA; IB = 0.5 mA

-

-

150

mV

VI(off)

off-state input voltage

VCE =5V; IC =100 μA-

0.8

0.5

V

VI(on)

on-state input voltage

VCE = 300 mV; IC =2mA

2

1.1

-

V

R1

bias resistor 1 (input)

15.4

22

28.6

k

Ω

R2/R1

bias resistor ratio

1.7

2.1

2.6

Cc

collector capacitance

VCB =10V; IE =ie =0 A;

f=1MHz

--

2.5

pF