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PDTC124XM 数据表(PDF) 7 Page - Nexperia B.V. All rights reserved |
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PDTC124XM 数据表(HTML) 7 Page - Nexperia B.V. All rights reserved |
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7 / 13 page ![]() PDTC124X_SER_7 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 07 — 16 November 2009 6 of 12 NXP Semiconductors PDTC124X series NPN resistor-equipped transistors; R1 = 22 k Ω, R2 = 47 kΩ VCE =5V (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −40 °C IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −40 °C Fig 1. DC current gain as a function of collector current; typical values Fig 2. Collector-emitter saturation voltage as a function of collector current; typical values VCE =0.3 V (1) Tamb = −40 °C (2) Tamb =25 °C (3) Tamb = 100 °C VCE =5V (1) Tamb = −40 °C (2) Tamb =25 °C (3) Tamb = 100 °C Fig 3. On-state input voltage as a function of collector current; typical values Fig 4. Off-state input voltage as a function of collector current; typical values IC (mA) 10−1 102 10 1 006aaa174 102 10 103 hFE 1 (1) (2) (3) IC (mA) 1102 10 006aaa175 102 103 VCEsat (mV) 10 (1) (2) (3) 006aaa176 IC (mA) 10−1 102 10 1 1 10 VI(on) (V) 10−1 (1) (3) (2) 006aaa177 IC (mA) 10−2 10 1 10−1 1 10 VI(off) (V) 10−1 (1) (3) (2) |
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