Nexperia

BAS116LS-Q

Low-leakage diode

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

0.9

V

IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

1

V

IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

1.1

V

VF

forward voltage

IF = 150 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

1.25

V

VR = 75 V; pulsed; Tamb = 25 °C

-

-

5

nA

IR

reverse current

VR = 75 V; pulsed; Tamb = 150 °C

-

-

80

nA

Cd

diode capacitance

VR = 0 V; f = 1 MHz; Tamb = 25 °C

-

2

-

pF

trr

reverse recovery time

IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;

RL = 100 Ω; Tamb = 25 °C

-

-

3

µs

aaa-022961

10-3

10-2

10-1

1

IF

(A)

10-4

VF (V)

0.0

2.0

1.5

0.5

1.0

(1)

(2)

(3)

(4)

(1) Tamb = 150 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

(4) Tamb = −40 °C

Fig. 3. Forward current as a function of forward

voltage; typical values

102

150

200

50

0

aaa-034018

100

10

1

10-1

10-2

10-3

IR

(nA)

Tamb (°C)

(1)

(2)

VR = 75 V

(1) Maximum values

(2) Typical values

Fig. 4. Reverse current as a function of ambient

temperature

BAS116LS-Q

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Product data sheet

3 January 2022

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