Nexperia

BAS116LS-Q

Low-leakage diode

5. Pinning information

Table 2. Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

K

cathode

2

A

anode

Transparent

top view

2

1

DFN1006BD-2 (SOD882BD)

aaa-028035

K

A

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

BAS116LS-Q

DFN1006BD-2 Leadless ultra small plastic package with side-wettable

flanks (SWF); 2 terminals; 0.65 mm pitch; 1 mm x 0.6 mm

x 0.47 mm body

SOD882BD

7. Marking

Table 4. Marking codes

Type number

Marking code

BAS116LS-Q

9C

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VR

reverse voltage

Tamb = 25 °C

-

75

V

VRRM

repetitive peak reverse

voltage

-

85

V

IF

forward current

Tamb = 25 °C

[1]

-

325

mA

IFRM

repetitive peak forward

current

tp ≤ 0.5 ms; δ ≤ 0.25; Tamb = 25 °C

-

700

mA

tp = 100 µs; square wave

-

4

A

tp = 1 ms; square wave

-

1.5

A

IFSM

non-repetitive peak

forward current

tp = 1 s; square wave

-

0.5

A

[1]

-

345

mW

Ptot

total power dissipation

Tamb ≤ 25 °C

[2]

-

645

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), 70 µm single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, 70 µm single-sided copper, tin-plated, mounting pad for cathode 1 cm².

BAS116LS-Q

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Product data sheet

3 January 2022

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