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CEB25N65CS 数据表(PDF) 3 Page - CET-MOS Technology Corp. |
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CEB25N65CS 数据表(HTML) 3 Page - CET-MOS Technology Corp. |
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3 / 5 page ![]() 3 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 VDS=VGS ID=250µA -50 -25 0 25 50 75 100 125 150 VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature CEP25N65CS/CEB25N65CS CEF25N65CS 3.0 0.0 2.5 2.0 1.5 1.0 0.5 VGS=10V ID=12.5A -100 -50 0 50 100 150 200 0.4 0.6 0.8 1.0 10 1 10 0 10 2 1.2 1.6 1.4 VGS=0V 0 2 4 6 -55 C 10 8 48 0 40 8 16 24 32 TJ=125C 25 C 24 16 8 0 0 2 4 10 6 VGS=5V VGS=10,9,8,7V VGS=6V 8 32 40 Ciss Coss Crss 3000 2500 2000 1500 1000 500 0 0 30 60 90 120 150 |
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