Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BVDSS

IDSS

IGSSR

IGSSF

0.125

0.115

2.5

4.5

-100

100

1

Ω

V

nA

nA

µ

A

V

2

Gate Body Leakage Current, Reverse

On Characteristics b

Dynamic Characteristics c

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics c

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage b

Test Condition

VGS = 0V, ID = 250µA

VGS(th)

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Typ

Max

650

VDS = 650V, VGS = 0V

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 12.5A

VDD = 400V, ID =12A,

VGS = 10V, RGEN = 10Ω

VDS = 400V,ID = 12A,

VGS = 10V

VDS = 100V, VGS = 0V,

f = 1.0 MHz

1905

115

5

34

9

67

8

42

11

13

24

1.5

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

IS f

VGS = 0V, IS = 12.5A g

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature .

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .

c.Guaranteed by design, not subject to production testing.

d.Limited only by maximum temperature allowed .

e.Pulse width limited by safe operating area .

f.Full package IS(max) = 13A .

g.Full package VSD test condition IS = 13A .

h.L = 44.5mH, IAS = 6A, VDD = 60V, RG = 25Ω, Starting TJ = 25 C.

CEP25N65CS/CEB25N65CS

CEF25N65CS