1999 May 21

3

Philips Semiconductors

Product specification

General purpose controlled avalanche

(double) diodes

BAS29; BAS31; BAS35

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

repetitive peak reverse voltage

−

110

V

continuous reverse voltage

−

90

V

continuous forward current

single diode loaded; see Fig.2;

note 1

−

250

mA

double diode loaded; see Fig.2;

note 1

−

150

mA

repetitive peak forward current

−

600

mA

non-repetitive peak forward current

surge; see Fig.4

t=1

µs

−

10

A

t = 100

µs

−

4A

t=1s

−

0.75

A

total power dissipation

−

250

mW

repetitive peak reverse current

−

600

mA

repetitive peak reverse energy

−

5mJ

storage temperature

−65

+150

°C

junction temperature

−

150

°C