BAS29 datasheet(4/12 Pages) PHILIPS

4 / 12 page

1999 May 21

Philips Semiconductors

Product speciﬁcation

General purpose controlled avalanche

(double) diodes

BAS29; BAS31; BAS35

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

forward voltage

see Fig.3

IF =10mA

−

750

IF =50mA

−

840

IF = 100 mA

−

900

IF = 200 mA

−

IF = 400 mA

−

1.25

reverse current

see Fig.5

VR =90V

−

100

VR =90V; Tj = 150 °C

−

100

µA

V(BR)R

reverse avalanche breakdown

voltage

IR = 1 mA

120

170

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

−

trr

reverse recovery time

when switched from IF = 30 mA to

IR = 30 mA; RL = 100 Ω;

measured at IR = 3 mA; see Fig.7

−

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

360

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

BAS29 数据表(PDF) 4 Page - NXP Semiconductors

BAS29 数据表(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表下载