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2DTA 数据表(PDF) 1 Page - Bourns Electronic Solutions

部件名 2DTA
功能描述  Thin Film on Silicon 2DEA Integrated ESD Protection Diode Array
PDF  3 Pages
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制造商  BOURNS [Bourns Electronic Solutions]
网页  http://www.bourns.com
标志 BOURNS - Bourns Electronic Solutions

2DTA 数据表(HTML) 1 Page - Bourns Electronic Solutions

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Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Thin Film on Silicon 2DTA High Performance Memory Bus Terminator
Features
Lead free versions available
RoHS compliant (lead free version)*
18 termination channels
Incorporates 36 bi-directional Schottky-
based diodes
Small form factor replaces 18 SOT23
packages
Low forward voltage (2 options available)
Very fast recovery time
General Information
The Model 2DTA Series High Performance Memory Bus
Terminator is well-suited for high speed bus termination
applications where variable bus loading and very low
terminator power dissipation are required. This very efficient
high speed terminator array is highly integrated and is very
effective for use in space constrained applications such as PC
notebooks and motherboards, engineering workstations and
portable battery powered devices. Two performance options
are available. The higher grade 2DTA-5 with a maximum
forward voltage of 0.75 V is suited for ultra-fast and dense
memory termination configurations. The 2DTA-10, with a
maximum specified forward voltage of 0.85 V is primarily
targeted to general purpose applications where board space is
critical.
Package Schematic
18
7
17
8
16
9
15
10
14
11
13
12
23
24
2
1
22
3
21
4
20
5
19
6
GND
GND
VDD
VDD
GND
VDD
Electrical Characteristics
Symbol
Minimum
Nominal
Maximum
Unit
VDD
-0.3
+7
V
Channel Clamp Current (continuous)
IC
±50
mA
2DTA-5 Forward Voltage:
@If = 16 mA
Vf
0.4
0.65
V
@If = 50 mA
Vf
0.5
0.75
V
2DTA-10 Forward Voltage:
@If = 16 mA
Vf
0.5
0.75
V
@If = 50 mA
Vf
0.65
0.85
V
Leakage Current @ Max. VDD
0.1
5
µA
Diode Capacitance
5pF
Diode Ohmic Resistance
5
Charge Carrier Lifetime
tl
100
pS
Environmental Characteristics
ESD Protection (Mil-Std-883 Method 3015)
4
KV
Operating Temperature
TJ
-55
+125
°C
Storage Temperature
Tstg
-65
+150
°C
Diode Power Rating
20
mW/diode
Electrical & Environmental Characteristics
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex


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