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MIC2584-XBTS 数据表(PDF) 23 Page - Micrel Semiconductor |
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MIC2584-XBTS 数据表(HTML) 23 Page - Micrel Semiconductor |
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23 / 28 page ![]() March 2005 23 MIC2584/2585 MIC2584/2585 Micrel the opposite direction. Here, the worst-case maximum cur- rent is found using a 57.5mV trip voltage and a sense resistor that is 3% low in value. The resulting equation is: I 57.5mV 0.97 R 59.3mV R LOAD(CONT,MAX) SENSE(NOM) SENSE(NOM) = () () = (12) As an example, if an output must carry a continuous 6A without nuisance trips occurring, Equation 11 yields: R 41.3mV 6A m SENSE(MAX) == Ω 688 . . The next lowest standard value is 6m Ω. At the other set of tolerance extremes for the output in question, I 59.3mV 6.0m A LOAD(CONT,MAX) = Ω = 988 . . Knowing this final da- tum, we can determine the necessary wattage of the sense resistor using P = I2R, where I will be ILOAD(CONT, MAX), and R will be (0.97)(R SENSE(NOM)). These numbers yield the following: P MAX = (9.88A) 2 (5.82m Ω) = 0.568W. In this ex- ample, a 1W sense resistor is sufficient. MOSFET Selection Selecting the proper external MOSFET for use with the MIC2584/85 involves three straightforward tasks: • Choice of a MOSFET which meets minimum voltage requirements. • Selection of a device to handle the maximum continuous current (steady-state thermal is- sues). • Verify the selected part’s ability to withstand any peak currents (transient thermal issues). MOSFET Voltage Requirements The first voltage requirement for the MOSFET is easily stated: the drain-source breakdown voltage of the MOSFET must be greater than V IN(MAX). For instance, a 12V input may reason- ably be expected to see high-frequency transients as high as 18V. Therefore, the drain-source breakdown voltage of the MOSFET must be at least 19V. For ample safety margin and standard availability, the closest minimum value will be 20V. The second breakdown voltage criterion that must be met is a bit subtler than simple drain-source breakdown voltage, but is not hard to meet. In MIC2584/85 applications, the gate of the external MOSFET is driven up to approximately 20V by the internal output MOSFET (again, assuming 12V operation). At the same time, if the output of the external MOSFET (its source) is suddenly subjected to a short, the gate-source voltage will go to (20V – 0V) = 20V. This means that the external MOSFET must be chosen to have a gate-source breakdown voltage of 20V or more, which is an available standard maximum value. However, if operation is above 12V, the 20V gate-source maximum will likely be exceeded. As a result, an external Zener diode clamp should be used to prevent breakdown of the external MOSFET when operating at voltages above 10V. A Zener diode with 10V rating is recommended as shown in Figure 12. At the present time, most power MOSFETs with a 20V gate-source voltage rating have a 30V drain-source break- down rating or higher. As a general tip, choose surface-mount devices with a drain-source rating of 30V as a starting point. Finally, the external gate drive of the MIC2584/85 requires a low-voltage logic level MOSFET when operating at voltages lower than 3V. There are 2.5V logic level MOSFETs available. See Table 5, " MOSFET and Sense Resistor Vendors" for suggested manufacturers. I2 TX_/RX I1 VDD VDD CORE SUPPLY (VCC) OUTPUT DRIVER CIRCUIT BLOCK OUTPUT DRIVER CIRCUIT BLOCK Data In OE Data Out External Bus Control I/O Dual Supply DSP Peripheral CORE I/O SUPPLY (VDD) Data In OE Data Out Figure 11. Bidirectional Port Bus Contention |
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