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BAT854SW 数据表(PDF) 1 Page - Nexperia B.V. All rights reserved |
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BAT854SW 数据表(HTML) 1 Page - Nexperia B.V. All rights reserved |
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1 / 8 page ![]() BAT854SW 40 V, 200 mA Schottky barrier dual diode 4 January 2023 Product data sheet 1. General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Very low forward voltage • Very low reverse current • Guard ring protected • Very small SMD plastic package • AEC-Q101 qualified 3. Applications • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes • Low power consumption applications (e.g. hand-held applications) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode VR reverse voltage - - 40 V IF forward current - - 200 mA VF forward voltage IF = 100 mA; Tamb = 25 °C - - 550 mV IR reverse current VR = 25 V; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C - - 0.5 µA |
类似零件编号 - BAT854SW |
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类似说明 - BAT854SW |
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