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BAT854SW

40 V, 200 mA Schottky barrier dual diode

5. Pinning information

Table 2. Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

A1

anode (diode 1)

2

K2

cathode (diode 2)

3

K1, A2

cathode (diode 1), anode

(diode 2)

1

2

3

SC-70 (SOT323)

006aaa437

A1

K2

K1; A2

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

BAT854SW

SC-70

plastic, surface-mounted package; 3 leads; 1.3 mm pitch;

2 mm x 1.25 mm x 0.95 mm body

SOT323

7. Marking

Table 4. Marking codes

Type number

Marking code[1]

BAT854SW

84%

[1] % = placeholder for manufacturing site code

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

VR

reverse voltage

-

40

V

IF

forward current

-

200

mA

IFRM

repetitive peak forward

current

tp ≤ 1 s; δ ≤ 0.5

-

300

mA

IFSM

non-repetitive peak

forward current

tp = 8.3 ms; half sinewave; JEDEC method;

Tj(init) = 25 °C

-

1

A

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

BAT854SW

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© Nexperia B.V. 2023. All rights reserved

Product data sheet

4 January 2023

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